Effect of Sn Doping on the Properties of Nano-Structured ZnO Thin Films Deposited by Co-Sputtering Technique

被引：11

作者：

Islam, M. A. ^{[1
]}

Rahman, K. S. ^{[1
]}

Haque, E. ^{[1
]}

Khan, N. A. ^{[1
]}

Akhtaruzzaman, M. ^{[1
]}

Alam, M. M. ^{[3
]}

Ruslan, H. ^{[1
]}

Sopian, K. ^{[1
]}

Amin, N. ^{[1
,2
,3
]}

机构：

[1] Natl Univ Malaysia UKM, Solar Energy Res Inst, Bangi 43600, Selangor, Malaysia

[2] Natl Univ Malaysia UKM, Dept Elect Elect & Syst Engn, Bangi 43600, Selangor, Malaysia

[3] King Saud Univ, Coll Sci, Dept Chem, Adv Mat Res Chair, Riyadh 11421, Saudi Arabia

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2015年 / 15卷 / 11期

关键词：

Sn Doped ZnO; Nano-Structure; Co-Sputtering; Annealing; Electrical Properties; ZINC-OXIDE FILMS; OPTICAL-PROPERTIES; ELECTRICAL-PROPERTIES; TRANSPARENT; AL; ANODE; TEMPERATURE; EXCITON;

D O I：

10.1166/jnn.2015.11416

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

In this study, tin doped zinc oxide (ZnO:Sn) nano-structured thin films were successfully deposited by co-sputtering of ZnO and Sn on top of glass substrate. The effect of Sn doping on the microstructure, phase, morphology, optical and electrical properties of the films were extensively investigated by means of XRD, EDX, SEM, AFM, Hall Effect measurement, and UV-Vis spectrometry. The results showed that the undoped ZnO film exhibited preferred orientation along the c-axis of the hexagonal wurtzite structure. With increase of Sn doping, the peak position of the (002) plane was shifted to the higher 20 values, and ultimately changed to amorphous structure. The absorption edge was shifted to blue region which confirmed the excitonic quantum confinement effect in the films. Consequently, improved surface morphology with optical bandgap, reduced average particle size, reduced resistivity, enhanced Hall mobility and carrier concentration were observed in the doped films after vacuum annealing. Among all of the as-deposited and annealed ZnO:Sn films investigated in this study, annealed film doped with 8 at.% of Sn concentration exhibited the best properties with a bandgap of 3.84 eV, RMS roughness of 2.51 nm, resistivity of 2.36 ohm-cm, and Hall mobility of 83 cm(2) V-1 s(-1).

引用

页码：9184 / 9191

页数：8

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