Adsorption of molecular additive onto lead halide perovskite surfaces: A computational study on Lewis base thiophene additive passivation

被引:50
作者
Zhang, Lei [1 ]
Yu, Fengxi
Chen, Lihong
Li, Jingfa
机构
[1] Nanjing Univ Informat Sci & Technol, Sch Phys & Optoelect Engn, Dept Appl Phys, Nanjing 210044, Jiangsu, Peoples R China
基金
中国国家自然科学基金;
关键词
Halide perovskite surface; Additives; First principles; HALOGEN BOND PASSIVATION; TIO2; ANATASE; 101; SOLAR-CELLS; 1ST-PRINCIPLES; PERFORMANCE; CH3NH3PBI3; INTERFACES; TERMINATION; PHOTOANODE; STABILITY;
D O I
10.1016/j.apsusc.2018.02.251
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Organic additives, such as the Lewis base thiophene, have been successfully applied to passivate halide perovskite surfaces, improving the stability and properties of perovskite devices based on CH3NH3PbI3. Yet, the detailed nanostructure of the perovskite surface passivated by additives and the mechanisms of such passivation are not well understood. This study presents a nanoscopic view on the interfacial structure of an additive/perovskite interface, consisting of a Lewis base thiophene molecular additive and a lead halide perovskite surface substrate, providing insights on the mechanisms that molecular additives can passivate the halide perovskite surfaces and enhance the perovskite-based device performance. Molecular dynamics study on the interactions between water molecules and the perovskite surfaces passivated by the investigated additive reveal the effectiveness of employing the molecular additives to improve the stability of the halide perovskite materials. The additive/perovskite surface system is further probed via molecular engineering the perovskite surfaces. This study reveals the nanoscopic structure-property relationships of the halide perovskite surface passivated by molecular additives, which helps the fundamental understanding of the surface/interface engineering strategies for the development of halide perovskite based devices. (C) 2018 Elsevier B.V. All rights reserved.
引用
收藏
页码:176 / 183
页数:8
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