Conduction- and Valence-Band Energies in Bulk InAs1-xSbx and Type II InAs1-xSbx/InAs Strained-Layer Superlattices

被引：25

作者：

Lin, Youxi ^{[1
]}

Wang, Ding ^{[1
]}

Donetsky, Dmitry ^{[1
]}

Shterengas, Leon ^{[1
]}

Kipshidze, Gela ^{[1
]}

Belenky, Gregory ^{[1
]}

Svensson, Stefan P. ^{[2
]}

Sarney, Wendy L. ^{[2
]}

Hier, Harry S. ^{[2
]}

机构：

[1] SUNY Stony Brook, Dept ECE, Stony Brook, NY 11794 USA

[2] USA, Res Lab, Adelphi, MD 20783 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2013年 / 42卷 / 05期

基金：

美国国家科学基金会;

关键词：

InAsSb; SLS; energy-band offsets; bowing; broadening; BEAM EPITAXIAL-GROWTH; OPTICAL-PROPERTIES; INASSB; ALLOYS; INSB; GAP;

D O I：

10.1007/s11664-013-2528-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The energy gaps were studied in two types of structures: unrelaxed bulk InAs1-x Sb (x) layers with x = 0.2 to 0.46 grown on metamorphic buffers and type II InAs1-x Sb (x) /InAs strained-layer superlattices (SLS) with x = 0.225 to 0.296 in the temperature range from T = 13 K to 300 K. All structures were grown on GaSb substrates. The longest wavelength of photoluminescence (PL) at low temperatures was observed from bulk InAs0.56Sb0.44 with a peak at 10.3 mu m and full-width at half-maximum (FWHM) of 11 meV. The PL data for the bulk InAs1-x Sb (x) materials of various compositions imply an energy gap bowing parameter of 0.87 eV. A low-temperature PL peak at 9.1 mu m with FWHM of 13 meV was observed for InAs0.704Sb0.296/InAs SLS. The PL spectrum of InAs0.775Sb0.225/InAs SLS under pulsed excitation revealed a second peak associated with recombination of electrons in the three-dimensional (3D) continuum with holes in the InAs0.775Sb0.225. This experiment determined the conduction-band offset in the InAs0.775Sb0.225/InAs SLS. The energies of the conduction and valence bands in unstrained InAs1-x Sb (x) and their bowing with respect to the Sb composition are discussed.

引用

页码：918 / 926

页数：9

共 29 条

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