Size dependent charge storage characteristics of MBE grown Ge nanocrystals on surface oxidized Si

被引：15

作者：

Aluguri, R. ^{[1
]}

Das, S. ^{[1
]}

Singha, R. K. ^{[1
]}

Ray, S. K. ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Phys & Meteorol, Kharagpur 721302, W Bengal, India

来源：

CURRENT APPLIED PHYSICS | 2013年 / 13卷 / 01期

关键词：

Molecular beam epitaxy; Ge nanocrystals; Floating gate memory; CONDUCTANCE-VOLTAGE MEASUREMENTS; LAYER-DEPOSITED HFO2; MEMORY STRUCTURES; OXIDE; SILICON; DENSITY; AL2O3;

D O I：

10.1016/j.cap.2012.06.002

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have demonstrated the growth of size controlled Ge nanocrystals by molecular beam epitaxy on oxidized Si for the fabrication of floating gate memory structure. The size and density of the nanocrystals have been controlled by varying the growth temperature. The role of interface states and nanocrystals on the memory characteristics has been studied using frequency dependent conductance-voltage measurements. Superior retention characteristics and an enhanced memory window width have been achieved by replacing SiO2 with high-k Al2O3 as a blocking oxide with a higher barrier height. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：12 / 17

页数：6

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