Size dependent charge storage characteristics of MBE grown Ge nanocrystals on surface oxidized Si

被引：15

作者：

Aluguri, R. ^{[1
]}

Das, S. ^{[1
]}

Singha, R. K. ^{[1
]}

Ray, S. K. ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Phys & Meteorol, Kharagpur 721302, W Bengal, India

来源：

CURRENT APPLIED PHYSICS | 2013年 / 13卷 / 01期

关键词：

Molecular beam epitaxy; Ge nanocrystals; Floating gate memory; CONDUCTANCE-VOLTAGE MEASUREMENTS; LAYER-DEPOSITED HFO2; MEMORY STRUCTURES; OXIDE; SILICON; DENSITY; AL2O3;

D O I：

10.1016/j.cap.2012.06.002

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have demonstrated the growth of size controlled Ge nanocrystals by molecular beam epitaxy on oxidized Si for the fabrication of floating gate memory structure. The size and density of the nanocrystals have been controlled by varying the growth temperature. The role of interface states and nanocrystals on the memory characteristics has been studied using frequency dependent conductance-voltage measurements. Superior retention characteristics and an enhanced memory window width have been achieved by replacing SiO2 with high-k Al2O3 as a blocking oxide with a higher barrier height. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：12 / 17

页数：6

共 26 条

[1] Chemical vapor deposition of Ge nanocrystals on SiO2 [J].

Baron, T ;

Pelissier, B ;

Perniola, L ;

Mazen, F ;

Hartmann, JM ;

Rolland, G .

APPLIED PHYSICS LETTERS, 2003, 83 (07) :1444-1446

[2] THEORY OF COULOMB-BLOCKADE OSCILLATIONS IN THE CONDUCTANCE OF A QUANTUM DOT [J].

BEENAKKER, CWJ .

PHYSICAL REVIEW B, 1991, 44 (04) :1646-1656

[3] GROWTH WITH COALESCENCE DURING CONDENSATION [J].

BRISCOE, BJ ;

GALVIN, KP .

PHYSICAL REVIEW A, 1991, 43 (04) :1906-1917

[4] Charge storage and photoluminescence characteristics of silicon oxide embedded Ge nanocrystal trilayer structures [J].

Das, K ;

NandaGoswami, M ;

Mahapatra, R ;

Kar, GS ;

Dhar, A ;

Acharya, HN ;

Maikap, S ;

Lee, JH ;

Ray, SK .

APPLIED PHYSICS LETTERS, 2004, 84 (08) :1386-1388

[5] Improved charge injection characteristics of Ge nanocrystals embedded in hafnium oxide for floating gate devices [J].

Das, S. ;

Das, K. ;

Singha, R. K. ;

Dhar, A. ;

Ray, S. K. .

APPLIED PHYSICS LETTERS, 2007, 91 (23)

[6] Microstructural, chemical bonding, stress development and charge storage characteristics of Ge nanocrystals embedded in hafnium oxide [J].

Das, S. ;

Singha, R. K. ;

Manna, S. ;

Gangopadhyay, S. ;

Dhar, A. ;

Ray, S. K. .

JOURNAL OF NANOPARTICLE RESEARCH, 2011, 13 (02) :587-595

[7] Microstructural characteristics and phonon structures in luminescence from surface oxidized Ge nanocrystals embedded in HfO2 matrix [J].

Das, S. ;

Singha, R. K. ;

Gangopadhyay, S. ;

Dhar, A. ;

Ray, S. K. .

JOURNAL OF APPLIED PHYSICS, 2010, 108 (05)

[8] Fast and long retention-time nano-crystal memory [J].

Hanafi, HI ;

Tiwari, S ;

Khan, I .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (09) :1553-1558

[9] Electron trapping, storing, and emission in nanocrystalline Si dots by capacitance-voltage and conductance-voltage measurements [J].

Huang, SY ;

Banerjee, S ;

Tung, RT ;

Oda, S .

JOURNAL OF APPLIED PHYSICS, 2003, 93 (01) :576-581

[10] Size and aerial density distributions of Ge nanocrystals in a SiO2 layer produced by molecular beam epitaxy and rapid thermal processing [J].

Kanjilal, A ;

Hansen, JL ;

Gaiduk, P ;

Larsen, AN ;

Normand, P ;

Dimitrakis, P ;

Tsoukalas, D ;

Cherkashin, N ;

Claverie, A .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2005, 81 (02) :363-366

← 1 2 3 →