Indium surfactant effect on AlN/GaN heterostructures grown by metal-organic vapor-phase epitaxy: Applications to intersubband transitions

被引：53

作者：

Nicolay, S ^{[1
]}

Feltin, E

Carlin, JF

Mosca, M

Nevou, L

Tchernycheva, M

Julien, FH

Ilegems, M

Grandjean, N

机构：

[1] EPFL, Ecole Polytech IPEQ, CH-1015 Lausanne, Switzerland

[2] Univ Paris 11, CNRS, UMR 8622, Inst Elect Fondamentale, F-91405 Orsay, France

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 15期

关键词：

D O I：

10.1063/1.2186971

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on a dramatic improvement of the optical and structural properties of AlN/GaN multiple quantum wells (MQWs) grown by metal-organic vapor-phase epitaxy using indium as a surfactant. This improvement is observed using photoluminescence as well as x-ray diffraction. Atomic force microscopy shows different surface morphologies between samples grown with and without In. This is ascribed to a modified relaxation mechanism induced by different surface kinetics. These improved MQWs exhibit intersubband absorption at short wavelength (2 mu m). The absorption linewidth is as low as 65 meV and the absorption coefficient is increased by 85%.

引用

页数：3

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