Flexible organic light-emitting diodes on a polyestersulfone (PES) substrate using Al-doped ZnO anode grown by dual-plasma-enhanced metalorganic deposition system

被引：48

作者：

Lei, Po-Hsun ^{[1
]}

Hsu, Chia-Ming ^{[1
]}

Fan, Yu-Siang ^{[1
]}

机构：

[1] Natl Formosa Univ, Inst Electroopt & Mat Sci, Huwei 632, Yunlin County, Taiwan

来源：

ORGANIC ELECTRONICS | 2013年 / 14卷 / 01期

关键词：

Al-doped ZnO (AZO); Dual-plasma-enhanced metalorganic chemical vapor deposition (DPEMOCVD); Organic light-emitting diodes (OLEDs); Polyestersulfone (PES); THIN-FILMS; OPTICAL-PROPERTIES; TRANSPARENT;

D O I：

10.1016/j.orgel.2012.10.030

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This study proposes flexible organic light-emitting diodes (OLEDs) grown on polyestersulfone (PES) using Al-doped zinc oxide (AZO) as the anode, fabricated by the dual-plasmaenhanced chemical vapor deposition (DPEMOCVD) system. The experimental results including crystalline structure, optical, and electrical characteristics indicate that the quality of AZO films grown on PES depends on the deposition temperature and Al content. The optimal deposition temperature and Al content for AZO film are 185 C and 2.88 at%, respectively. Further increasing or decreasing the deposition temperature and Al content degrades the quality of AZO films. The optimal AZO film deposited on the PES substrate was used as the anode for flexible OLED. It shows a similar performance compared to OLEDs using commercial indium-tin-oxide (ITO) as the anode on glass, and represents enhanced characteristics to that of the commercial ITO anode on a flexible polyethylene naphthalate (PEN) substrate. This indicates that the DPEMOCVD-deposited AZO film on the PES substrate can be the anode for flexible OLEDs. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：236 / 249

页数：14

共 42 条

[11] Electrode interface effects on indium-tin-oxide polymer/metal light emitting diodes [J].

Gautier, E ;

Lorin, A ;

Nunzi, JM ;

Schalchli, A ;

Benattar, JJ ;

Vital, D .

APPLIED PHYSICS LETTERS, 1996, 69 (08) :1071-1073

[12] Influence of postdeposition annealing on the structural and optical properties of sputtered zinc oxide film [J].

Gupta, V ;

Mansingh, A .

JOURNAL OF APPLIED PHYSICS, 1996, 80 (02) :1063-1073

[13] Band gap and electronic properties of wurtzite-structure ZnO co-doped with IIA and IIIA [J].

Han, T. ;

Meng, F. Y. ;

Zhang, S. ;

Cheng, X. M. ;

Oh, J. I. .

JOURNAL OF APPLIED PHYSICS, 2011, 110 (06)

[14] Preparation of ZnO thin films using MOCVD technique with D2O/H2O gas mixture for use as TCO in silicon-based thin film solar cells [J].

Hongsingthong, Aswin ;

Yunaz, Ihsanul Afdi ;

Miyajima, Shinsuke ;

Konagai, Makoto .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2011, 95 (01) :171-174

[15] High quality ZnO films deposited by radio-frequency magnetron sputtering using layer by layer growth method [J].

Ievtushenko, A. I. ;

Karpyna, V. A. ;

Lazorenko, V. I. ;

Lashkarev, G. V. ;

Khranovskyy, V. D. ;

Baturin, V. A. ;

Karpenko, O. Y. ;

Lunika, M. M. ;

Avramenko, K. A. ;

Strelchuk, V. V. ;

Kutsay, O. M. .

THIN SOLID FILMS, 2010, 518 (16) :4529-4532

[16] Flexible Al-doped ZnO films grown on PET substrates using linear facing target sputtering for flexible OLEDs [J].

Jeong, Jin-A ;

Shin, Hyun-Su ;

Choi, Kwang-Hyuk ;

Kim, Han-Ki .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2010, 43 (46)

[17] High-performance GaN-based light-emitting diode using high-transparency Ni/Au/Al-doped ZnO composite contacts [J].

Jung, SP ;

Ullery, D ;

Lin, CH ;

Lee, HP ;

Lim, JH ;

Hwang, DK ;

Kim, JY ;

Yang, EJ ;

Park, SJ .

APPLIED PHYSICS LETTERS, 2005, 87 (18) :1-3

[18] Anode material based on Zr-doped ZnO thin films for organic light-emitting diodes [J].

Kim, H ;

Horwitz, JS ;

Kim, WH ;

Qadri, SB ;

Kafafi, ZH .

APPLIED PHYSICS LETTERS, 2003, 83 (18) :3809-3811

[19] Indium-tin oxide treatments for single- and double-layer polymeric light-emitting diodes: The relation between the anode physical, chemical, and morphological properties and the device performance [J].

Kim, JS ;

Granstrom, M ;

Friend, RH ;

Johansson, N ;

Salaneck, WR ;

Daik, R ;

Feast, WJ ;

Cacialli, F .

JOURNAL OF APPLIED PHYSICS, 1998, 84 (12) :6859-6870

[20] Optical and electronic properties of post-annealed ZnO:Al thin films [J].

Kim, Yumin ;

Lee, Woojin ;

Jung, Dae-Ryong ;

Kim, Jongmin ;

Nam, Seunghoon ;

Kim, Hoechang ;

Park, Byungwoo .

APPLIED PHYSICS LETTERS, 2010, 96 (17)

← 1 2 3 4 5 →