Characterization of zinc oxide thin films prepared by pulsed laser deposition at room temperature

被引：20

作者：

Sakai, Norihiro ^{[1
]}

Umeda, Yoshihiro ^{[1
]}

Mitsugi, Fumiaki ^{[1
]}

Ikegami, Tomoaki ^{[1
]}

机构：

[1] Kumamoto Univ, Grad Sch Sci & Technol, Kumamoto 8608555, Japan

来源：

SURFACE & COATINGS TECHNOLOGY | 2008年 / 202卷 / 22-23期

关键词：

ZnO; TCO; PLD; Room temperature deposition; Spectroscopic measurement;

D O I：

10.1016/j.surfcoat.2008.06.026

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Undoped ZnO, Al-doped ZnO (AZO) and Ga-doped ZnO (GZO) thin films were deposited on silica glass substrate at room temperature in a vacuum by KrF excimer laser (lambda = 248 nm) pulsed laser deposition method. The transparency of ZnO thin films showed the dependence on deposition area. The relationship between emission spectra and the crystallographic structure, the electrical and optical properties of ZnO films prepared at different substrate positions were investigated. An optical measurement showed that film thickness of all substrate position was about 350 nm and maximum transparency of thin film in all substrate position was about 70% in visible region. AZO and GZO thin films showed lower resistivity of below the order of similar to 10(-3) Omega cm independence on substrate position. Emission lines of Zn, O and Ga atom were observed in all substrate position. (C) 2008 Published by Elsevier B.V.

引用

页码：5467 / 5470

页数：4

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