Defect Induced Magnetism In Ni Doped ZnO Nanoparticles

被引：1

作者：

Bhardwaj, R. ^{[1
]}

Kumar, Manish ^{[2
]}

Chae, K. H. ^{[3
]}

Goyal, N. ^{[1
]}

机构：

[1] Panjab Univ, Dept Phys, Chandigarh 160014, India

[2] POSTECH, Pohang Accelerator Lab, Pohang 790784, South Korea

[3] Korea Inst Sci & Technol, Adv Anal Ctr, Seoul 02792, South Korea

来源：

3RD INTERNATIONAL CONFERENCE ON CONDENSED MATTER & APPLIED PHYSICS (ICC-2019) | 2020年 / 2220卷

关键词：

D O I：

10.1063/5.0001832

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Synthesis of ZnxNi1-xO with x=0, 0.01 was carried out through facile and economic sol-gel method. Rietveld refined diffraction patterns confirmed the wurtzite structure of prepared ZnO samples. Crystallite size obtained using Scherrer equation was 36 +/- 1 and 46 +/- 1 nm for pure and doped ZnO. Photoluminescence studies at room temperature showed a broad emission peak in the region 500-800 nm, which further showed onsets of defects/vacancies in ZnxNi1-xO samples. Magnetic measurements at room temperature showed the shift in magnetic behavior from diamagnetism for pure ZnO to weak ferromagnetism in Ni doped ZnO sample. This study established a correlation among the vacancies and magnetic behavior of doped ZnO sample.

引用

页数：4

共 12 条

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