A novel cross-spacer phase change memory with ultra-small lithography independent contact area

被引：25

作者：

Chen, W. S. ^{[1
,2
]}

Lee, C. M. ^{[1
]}

Chao, D. S. ^{[1
]}

Chen, Y. C. ^{[1
]}

Chen, F. ^{[1
]}

Chen, C. W. ^{[1
]}

Yen, P. H. ^{[1
]}

Chen, M. J. ^{[1
]}

Wang, W. H. ^{[1
]}

Hsiao, T. C. ^{[1
]}

Yeh, J. T. ^{[3
]}

Chiou, S. H. ^{[3
]}

Liu, M. Y. ^{[4
]}

Wang, T. C. ^{[4
]}

Chein, L. L. ^{[5
]}

Huang, C. M. ^{[5
]}

Shih, N. T. ^{[6
]}

Tu, L. S. ^{[6
]}

Huang, D. ^{[7
]}

Yu, T. H. ^{[7
]}

Kao, M. J. ^{[1
]}

Tsai, M. J. ^{[1
,2
]}

机构：

[1] ITRI, Elect & Optoelect Res Lab, Hsinchu, Taiwan

[2] ITRI, Nano Technol Res Ctr, Hsinchu, Taiwan

[3] ITRI, Mat & Chemi Res Labs, Hsinchu, Taiwan

[4] Powerchip Semicond Corp, Hsinchu, Taiwan

[5] ProMOS Technol, Hsinchu, Taiwan

[6] Nanya Technol Corp, Taoyan, Taiwan

[7] Winbond Elect Corp, Hsinchu, Taiwan

来源：

2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2 | 2007年

关键词：

D O I：

10.1109/IEDM.2007.4418935

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A cross-spacer phase change memory (PCM) cell with ultra-small lithography-independent contact area for reduced writing current has been successfully demonstrated. By crossing the spacer sidewalls of phase change and heater material, a small contact area of similar to 1,000 nm(2) with 0.23 MA reset current is therefore obtained. The result of a derived 2-bit per cell (Chain) structure is also shown. The cross-spacer cell structure is a potential candidate for PCM with multi-bit per cell in one PC layer.

引用

页码：319 / +

页数：2

共 4 条

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