The aim of this paper is to derive and analyze diffusion models for semiconductor spintronics. We begin by presenting and studying the so called " spinor" Boltzmann equation. Starting then from a rescaled version of linear Boltzmann equation with different spin-flip and non spin-flip collision operators, different continuum (drift-diffusion) models are derived. By comparing the strength of the spin-orbit scattering with the scaled mean free paths, we explain how some models existing in the literature (like the two-component models) can be obtained from the spinor Boltzmann equation. A new spin-vector drift-diffusion model keeping spin relaxation and spin precession effects due to the spin-orbit coupling in semiconductor structures is derived and some of its mathematical properties are checked.