The dielectric properties enhancement due to Yb incorporation into HfO2

被引：12

作者：

Chen, Shuai ^{[1
]}

Liu, Zhengtang ^{[1
]}

Feng, Liping ^{[1
]}

Che, Xingsen ^{[1
]}

Zhao, Xiaoru ^{[1
]}

机构：

[1] Northwestern Polytech Univ, Sch Mat Sci & Engn, State Key Lab Solidificat Proc, Xian 710072, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 13期

基金：

中国国家自然科学基金;

关键词：

ELECTRICAL-PROPERTIES; GATE DIELECTRICS; THERMAL-STABILITY; HAFNIUM OXIDE; FILMS; INSULATOR;

D O I：

10.1063/1.4821850

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of Yb concentration and annealing temperature on the dielectric constant change of Yb-doped HfO2 thin film were investigated. The results show that the dielectric constant of Yb-doped HfO2 increased when doping with Yb after annealing. Compared with the undoped HfO2, the dielectric constant enhancement may result from the crystallographic change from monoclinic phase to the cubic phase. The Yb-doped HfO2 exhibited a lower leakage current than that of undoped HfO2 thin film. The electrical characteristics of Yb-doped HfO2 thin film illustrated that it is a promising gate dielectric layer for future high dielectric constant (high-k) gate dielectric applications. (C) 2013 AIP Publishing LLC.

引用

页数：4

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