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SOIPIX R&D programme and applications
被引:2
|作者:
Gil, E. Cortina
[1
]
Soung-Yee, L.
[1
]
机构:
[1] Catholic Univ Louvain, Ctr Cosmol Particle Phys & Phenomenol CP3, B-1348 Louvain, Belgium
来源:
JOURNAL OF INSTRUMENTATION
|
2015年
/
10卷
关键词:
Solid state detectors;
Materials for solid-state detectors;
Radiation-hard detectors;
ACTIVE PIXEL SENSOR;
DETECTOR;
TECHNOLOGY;
D O I:
10.1088/1748-0221/10/08/C08018
中图分类号:
TH7 [仪器、仪表];
学科分类号:
0804 ;
080401 ;
081102 ;
摘要:
SOIPiX is a R&D project targeting the development of monolithic pixel detectors with Silicon On Insulator technology for future high energy physics experiments, X-ray experiments, and other applications. It integrates both radiation sensors and LSI circuits in one chip to achieve high resolution and intelligent detectors. After a short introduction about the advantages of monolithic active pixel sensors, the main characteristics of SOI monolithic sensors will be discussed: technological process, response to incident radiation and radiation hardness. Special attention will be given to the description of the so-called "back-gate" effect and the different techniques developed to mitigate it. Finally, various applications of this technology will be presented.
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