SOIPIX R&D programme and applications

被引:2
|
作者
Gil, E. Cortina [1 ]
Soung-Yee, L. [1 ]
机构
[1] Catholic Univ Louvain, Ctr Cosmol Particle Phys & Phenomenol CP3, B-1348 Louvain, Belgium
来源
JOURNAL OF INSTRUMENTATION | 2015年 / 10卷
关键词
Solid state detectors; Materials for solid-state detectors; Radiation-hard detectors; ACTIVE PIXEL SENSOR; DETECTOR; TECHNOLOGY;
D O I
10.1088/1748-0221/10/08/C08018
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
SOIPiX is a R&D project targeting the development of monolithic pixel detectors with Silicon On Insulator technology for future high energy physics experiments, X-ray experiments, and other applications. It integrates both radiation sensors and LSI circuits in one chip to achieve high resolution and intelligent detectors. After a short introduction about the advantages of monolithic active pixel sensors, the main characteristics of SOI monolithic sensors will be discussed: technological process, response to incident radiation and radiation hardness. Special attention will be given to the description of the so-called "back-gate" effect and the different techniques developed to mitigate it. Finally, various applications of this technology will be presented.
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页数:16
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