A resonant magnetic field microsensor with high quality factor at atmospheric pressure

A resonant magnetic field microsensor with a high quality factor at atmospheric pressure has been designed, fabricated and tested. This microsensor does not require vacuum packaging to operate efficiently and presents a compact and simple geometrical configuration of silicon. This geometry permits us to decrease the size of the structure and facilities its fabrication and operation. It is constructed of a seesaw plate (400 x 150 x 15 mu m(3)), two torsional beams (60 x 40 x 15 mu m(3)), four flexural beams (130 x 12 x 15 mu m(3)) and a Wheatstone bridge with four p-type piezoresistors. The resonant device exploits the Lorentz force principle and operates at its first resonant frequency (136.52 kHz). A sinusoidal excitation current of 22.0 mA with a frequency of 136.52 kHz and magnetic fields from 1 to 400 G are considered. The mechanical response of the microsensor is modeled with the finite element method (FEM). The structure of the microsensor registered a maximum von Mises stress of 53.8 MPa between the flexural and the torsional beams. Additionally, a maximum deflection (372.5 nm) is obtained at the extreme end of the plate. The proposed microsensor has the maximum magnetic sensitivity of 40.3 mu V G(-1) (magnetic fields < 70 G), theoretical root-mean square (rms) noise voltage of 57.48 nV Hz(-1/2), theoretical resolution of 1.43 mG Hz(-1/2) and power consumption less than 10.0 mW.