Interfacial and annealing effects on magnetic properties of CoFeB thin films

被引:82
作者
Wang, Yung-Hung [1 ]
Chen, Wei-Chuan
Yang, Shan-Yi
Shen, Kuei-Hung
Park, Chando
Kao, Ming-Jer
Tsai, Ming-Jinn
机构
[1] Elect Res & Serv Org, Ind Technol Res Inst, Hsinchu 310, Taiwan
[2] Carnegie Mellon Univ, Ctr Data Storage Syst, Pittsburgh, PA 15213 USA
关键词
D O I
10.1063/1.2176108
中图分类号
O59 [应用物理学];
学科分类号
摘要
The interfacial and annealing effects on magnetic properties of CoFeB thin films with Ta and Ru interfaces were investigated. It is found that the thickness of magnetically dead layer of as-deposited CoFeB film strongly depends on the interfaces. After annealing above 150 degrees C boron atoms seem to diffuse out of CoFeB film and the effective saturation magnetization of CoFeB film increases with annealing temperature and annealing time. In addition, CoFeB film with Ta interfaces remains amorphous while that with Ru interfaces starts to crystallize during the annealing above 250 degrees C. Furthermore, the annealing-induced anisotropy field of CoFeB film can be modified by using different seed and capping materials. (C) 2006 American Institute of Physics.
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页数:3
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共 8 条
  • [1] Annealing effect on the magnetic properties of Ta 50 Å/Cu 50 Å/Co 75 Å/Cu 50 Å/Ta 50 Å sandwiches
    Bensmina, F
    Humbert, P
    Dinia, A
    Muller, D
    Speriosu, VS
    Gurney, BA
    [J]. JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 1999, 198-99 : 338 - 340
  • [2] Characterization of CoFeB electrodes for tunnel junctions
    Cardoso, S
    Cavaco, C
    Ferreira, R
    Pereira, L
    Rickart, M
    Freitas, PP
    Franco, N
    Gouveia, J
    Barradas, NP
    [J]. JOURNAL OF APPLIED PHYSICS, 2005, 97 (10)
  • [3] Thermal annealing of junctions with amorphous and polycrystalline ferromagnetic electrodes
    Dimopoulos, T
    Gieres, G
    Wecker, J
    Wiese, N
    Sacher, MD
    [J]. JOURNAL OF APPLIED PHYSICS, 2004, 96 (11) : 6382 - 6386
  • [4] 230% room-temperature magnetoresistance in CoFeB/MgO/CoFeB magnetic tunnel junctions
    Djayaprawira, DD
    Tsunekawa, K
    Nagai, M
    Maehara, H
    Yamagata, S
    Watanabe, N
    Yuasa, S
    Suzuki, Y
    Ando, K
    [J]. APPLIED PHYSICS LETTERS, 2005, 86 (09) : 1 - 3
  • [5] Thickness-dependent magnetic properties of Ni81Fe19, Co90Fe10 and Ni65Fe15Co20 thin films
    Ingvarsson, S
    Xiao, G
    Parkin, SSP
    Gallagher, WJ
    [J]. JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2002, 251 (02) : 202 - 206
  • [6] The effect of Ta on the magnetic thickness of permalloy (Ni81Fe19) films
    Kowalewski, M
    Butler, WH
    Moghadam, N
    Stocks, GM
    Schulthess, TC
    Song, KJ
    Thompson, JR
    Arrott, AS
    Zhu, T
    Drewes, J
    Katti, RR
    McClure, MT
    Escorcia, O
    [J]. JOURNAL OF APPLIED PHYSICS, 2000, 87 (09) : 5732 - 5734
  • [7] Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers
    Parkin, SSP
    Kaiser, C
    Panchula, A
    Rice, PM
    Hughes, B
    Samant, M
    Yang, SH
    [J]. NATURE MATERIALS, 2004, 3 (12) : 862 - 867
  • [8] 70% TMR at room temperature for SDT sandwich junctions with CoFeB as free and reference layers
    Wang, DX
    Nordman, C
    Daughton, JM
    Qian, ZH
    Fink, J
    [J]. IEEE TRANSACTIONS ON MAGNETICS, 2004, 40 (04) : 2269 - 2271