A 1.4-μW 24.9-ppm/°C Current Reference With Process-Insensitive Temperature Compensation in 0.18-μm CMOS

被引:69
作者
Lee, Junghyup [1 ]
Cho, SeongHwan [2 ]
机构
[1] Inst Microelect, Singapore 117685, Singapore
[2] Korea Adv Inst Sci & Technol, Dept Elect Engn, Taejon 305701, South Korea
基金
新加坡国家研究基金会;
关键词
CMOS; current reference; low power; low supply voltage; process-insensitive; temperature compensation; VOLTAGE REFERENCE; PPM/DEGREES-C;
D O I
10.1109/JSSC.2012.2204475
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents a trim-free low-voltage and low-power CMOS current reference which achieves high current stability to temperature variation. In order to achieve process-insensitive temperature compensation, the proposed circuit employs ratio between the process-independent temperature coefficients of resistor and compensation voltage. The proposed current reference is implemented in 0.18-mu m CMOS technology and consumes 1.4 mu W from a 1-V supply. It achieves temperature coefficient of 24.9 ppm/degrees C with 0 degrees C to 100 degrees C of temperature variation without trimming, which is the lowest among the recently reported CMOS current references.
引用
收藏
页码:2527 / 2533
页数:7
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