Morphological Control of Single-Crystalline Silicon Nanowire Arrays near Room Temperature

被引：152
作者：
Chen, Chia-Yun [1 ]
Wu, Chi-Sheng [1 ]
Chou, Chia-Jen [2 ]
Yen, Ta-Jen [1 ]
机构：
[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan
[2] Natl Tsing Hua Univ, Dept Ind Engn & Engn Management, Hsinchu 300, Taiwan
来源：
ADVANCED MATERIALS | 2008年 / 20卷 / 20期
关键词：
D O I：
10.1002/adma.200702788
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Control of the orientation, diameter, and length of silicon nanowires (SiNWs) is achieved in large-scale single-crystalline SiNW arrays fabricated by a statistical electroless metal deposition technique. Taguchi methods are employed to optimize the diameter control and to understand the influence of all processing factors on the growth. The < 100 > directions are found to be the preferred crystallographic orientation of the growing SiNWs (see figure).
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页码：3811 / +
页数：6
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