Suboxide interface induced digital-to-analog switching transformation in all Ti-based memristor devices

被引:22
作者
Chang, Lung-Yu [1 ]
Simanjuntak, Firman Mangasa [1 ,2 ]
Hsu, Chun-Ling [1 ]
Chandrasekaran, Sridhar [3 ]
Tseng, Tseung-Yuen [1 ]
机构
[1] Natl Chiao Tung Univ, Inst Elect, Hsinchu 30010, Taiwan
[2] Univ Southampton, Ctr Elect Frontiers, Zepler Inst Photon & Nanoelect, Southampton SO17 1BJ, Hants, England
[3] Natl Chiao Tung Univ, Dept Elect Engn & Comp Sci, Hsinchu 30010, Taiwan
基金
英国工程与自然科学研究理事会;
关键词
TRANSITION; MEMORY;
D O I
10.1063/5.0014829
中图分类号
O59 [应用物理学];
学科分类号
摘要
Oxidation of TiN is a diffusion-limited process due to the high stability of the TiN metallic state at the TiN/TiO2 junction. Hence, the TiN/TiO2/TiN device being the inability to form a suitable interfacial layer results in the exhibition of abrupt current (conductance) rise and fall during the set (potentiation) and reset (depression) processes, respectively. Interfacial engineering by depositing Ti film served as the oxygen gettering material on top of the TiO2 layer induces a spontaneous reaction to form a TiOx interfacial layer (due to the low Gibbs free energy of suboxide formation). Such an interface layer acts as an oxygen reservoir that promotes gradual oxidation and reduction during the set and reset processes. Consequently, an excellent analog behavior having a 2-bit per cell and robust epoch training can be achieved. However, a thick interfacial layer may degrade the switching behavior of the device due to the high internal resistance. This work suggests that interfacial engineering could be considered in designing high-performance analog memristor devices.
引用
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页数:5
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