Effect of modulation structure on the microstructural and mechanical properties of TiAlSiN/CrN thin films prepared by high power impulse magnetron sputtering

被引:32
作者
Liu, Hui [1 ,2 ,3 ]
Yang, Fu-Chi [2 ,3 ]
Tsai, Yi-Jing [2 ,3 ]
Wang, Xiaojian [1 ]
Li, Wei [1 ]
Chang, Chi-Lung [2 ,3 ]
机构
[1] Jinan Univ, Inst Adv Wear & Corros Resistant & Funct Mat, Guangzhou, Guangdong, Peoples R China
[2] Ming Chi Univ Technol, Dept Mat Engn, Taipei, Taiwan
[3] Ming Chi Univ Technol, Ctr Plasma & Thin Film Technol, Taipei, Taiwan
关键词
TiAlSiN/CrN multilayer films; HiPIMS; Modulation period; Hardness; Adhesion; THERMAL-STABILITY; COATINGS; HARDNESS; TIN/CRN; DESIGN;
D O I
10.1016/j.surfcoat.2018.11.069
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The newly developed TiAlSiN/CrN multilayer films were deposited on silicon Si (100) substrates and tungsten carbide steel substrates by high power impulse magnetron sputtering technique (HiPIMS) at 80 degrees C working temperature. The effect of modulation structure on the microstructural and mechanical properties of thin films was analyzed systematically by TEM, SEM, XRD, nanoindenter, Scratch test, and Rockwell indenter. The grain size of columnar crystals decreases as increasing the A from 2 nm to 27 nm. Correspondingly, the crystallite size in the (111) and (200) directions exhibited an increasing tendency, which calculated by the Debye-Scherrer equation. The hardness and Young's modulus exhibited an initial increased with decreasing A from 27 nm to 7.5 nm, followed by a decrease. The TiAlSiN/CrN multilayer films with A of 7.5 nm reached the highest hardness of 26.6 GPa and the highest Young's modulus of 295.4 GPa. However, the thin film with A of 8.5 nm exhibited a hardness value of 25.3 GPa and the highest adhesion strength, which the highest critical load Lc1 of 52 GPa and the morphology of Rockwell indentations can be classified as HF1. Therefore, based on both hardness and adhesion strength, an optimization TiAlSiN/CrN multilayer film is in the single layer thickness of 8.5 nm.
引用
收藏
页码:577 / 585
页数:9
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