Nobel a-Si:H gate drivers with high reliability

被引：0

作者：

Koo, Ja Hun ^{[1
]}

Choi, Jae Won ^{[1
]}

Kim, Young Seoung ^{[1
]}

Kang, Moon Hyo ^{[1
]}

Ahn, Ki Wan ^{[1
]}

Lee, Seung Woo ^{[1
]}

Jang, Jin ^{[1
]}

机构：

[1] Kyung Hee Univ, Dept Informat Display, Seoul 130701, South Korea

来源：

IDW '06: PROCEEDINGS OF THE 13TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3 | 2006年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We propose two kinds of a-Si:H gate driver with less threshold voltage shift, longer life time and more simplified structure. The one is the gate driver with only one pull down transistor for driving small panel, the other is the gate driver with two pull down transistors for driving large panel. These pull down transistors of gate drivers are under A C bias which show much less degradation than those under DC driving.

引用

页码：757 / 760

页数：4

共 8 条

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