Silicon oxynitride based photonics

被引：17
作者：
Worhoff, Kerstin [1 ]
Klein, Edwin [1 ]
Hussein, Gamar [1 ]
Driessen, Alfred [1 ]
机构：
[1] Univ Twente, Integrated Opt Microsyst Grp, MESA Res Inst Nanotechnol, NL-7500 AE Enschede, Netherlands
来源：
ICTON 2008: PROCEEDINGS OF 2008 10TH ANNIVERSARY INTERNATIONAL CONFERENCE ON TRANSPARENT OPTICAL NETWORKS, VOL 3 | 2008年
关键词：
silicon oxynitride; silicon nitride; chemical vapor deposition; integrated optical devices; hydrogen reduction; annealing;
D O I：
10.1109/ICTON.2008.4598706
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
Silicon oxynitride is a very attractive material for integrated optics. Besides possessing excellent optical properties it can be deposited with refractive indices varying over a wide range by tuning the material composition. In this contribution we will summarize the key properties of this material class and discuss several application examples. Preliminary results on novel processes, which will lead to largely reduced hydrogen incorporation and enable reflow of SiON material, are being presented.
引用
收藏
页码：266 / 269
页数：4
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