GaN-Based LEDs With Double Strain Releasing MQWs and Si Delta-Doping Layers

被引：7

作者：

Chang, Chung-Ying ^{[1
,2
]}

Chang, Shoou-Jinn ^{[1
,2
]}

Liu, C. H. ^{[3
]}

Li, Shuguang ^{[4
]}

Lin, T. K. ^{[5
]}

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 701, Taiwan

[2] Natl Cheng Kung Univ, Dept Elect Engn, Adv Optoelect Technol Ctr, Res Ctr Energy Technol & Strategy, Tainan 701, Taiwan

[3] Nan Jeon Inst Technol, Dept Elect, Tainan 73746, Taiwan

[4] China Univ Petr E China, Coll Sci, Qingdao 266555, Peoples R China

[5] Epistar Corp, Tainan 744, Taiwan

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2012年 / 24卷 / 20期

关键词：

GaN; light-emitting diodes (LEDs); strain release multiquantum well (MQW); Si delta-doping (Si-DD); NITRIDE-BASED LEDS; REDUCTION; POWER; BLUE;

D O I：

10.1109/LPT.2012.2216517

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, we report the fabrication of GaN-based light-emitting diodes (LEDs) with double strain releasing multiquantum wells and Si delta-doping (Si-DD) layers. We find that Si-DD can enhance current spreading in the in-plane direction and also suppress dislocation in the epitaxial layers. By inserting the Si-DD layers, we find that we can achieve a smaller forward voltage. We also find that we can significantly increase the reverse breakdown voltage from 35 to 125 V by introducing Si-DD layers. Furthermore, we find that the output power of the LED with Si-DD is more than 10% larger than that of the LED without Si-DD.

引用

页码：1809 / 1811

页数：3

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