3D simulation study of gate coupling and gate cross-interference in advanced floating gate non-volatile memories

被引：21

作者：

Ghetti, A ^{[1
]}

Bortesi, L ^{[1
]}

Vendrame, L ^{[1
]}

机构：

[1] ST Microelectronics, FTM, Adv R&D, NVM Technol Dev, I-20041 Milan, Italy

来源：

SOLID-STATE ELECTRONICS | 2005年 / 49卷 / 11期

关键词：

3D simulation; gate coupling; gate interference; floating gate; non-volatile memories;

D O I：

10.1016/j.sse.2005.10.014

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we present a 3D simulation study of gate coupling and gate cross-interference in advanced floating gate non-volatile memories. First, the simulation methodology is introduced and validated against experimental data. Then, physical effects that significantly impact the Coupling calculation are pointed Out. Finally, the method is applied to a sensitivity study of both gate coupling and gate cross-interference in different non-volatile memory architectures showing the increasing importance of this kind of analysis in designing more advanced technologies. (c) 2005 Elsevier Ltd. All rights reserved.

引用

页码：1805 / 1812

页数：8