In situ monitoring of structural changes in boron carbide under electric fields

被引：35

作者：

Fanchini, Giovanni ^{[1
]}

Gupta, Varun ^{[1
]}

Mann, Adrian B. ^{[1
]}

Chhowalla, Manish ^{[1
]}

机构：

[1] Rutgers State Univ, Piscataway, NJ 08854 USA

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 2008年 / 91卷 / 08期

关键词：

D O I：

10.1111/j.1551-2916.2008.02488.x

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In situ monitoring of the transformation of B4C under electric field using Raman spectroscopy is reported. Application of electric fields up to 5000 V/cm leads to local segregation of carbon, indicated by the appearance of Raman D and G peaks. At low electric fields (< 3000 V/cm) the segregated carbon is amorphous, while at higher fields aromatic sp(2) clustering is observed. Electrical measurements as a function of temperature are used to complement the Raman measurements. The results demonstrate that it is possible to induce transformations in boron carbide using electric fields that are comparable with those obtained under shock and nanoindentation.

引用

页码：2666 / 2669

页数：4

共 20 条

[1] Shock-induced brittle failure of boron carbide [J].