A comparative study of the growth of Cr on (110)TiO2 rutile, (0001) α-Al2O3 and (100)SrTiO3 surfaces

被引：8

作者：

Wagner, T ^{[1
]}

Fu, Q ^{[1
]}

Winde, C ^{[1
]}

Tsukimoto, S ^{[1
]}

Phillipp, F ^{[1
]}

机构：

[1] Max Planck Inst Met Res, D-70569 Stuttgart, Germany

来源：

INTERFACE SCIENCE | 2004年 / 12卷 / 01期

关键词：

MBE; Cr; metal-oxide interfaces; STM; XPS; AES; TEM;

D O I：

10.1023/B:INTS.0000012303.59127.37

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin Cr films were deposited on single crystal alpha-Al2O3, SrTiO3 and TiO2 (rutile) substrates under ultrahigh vacuum conditions using molecular beam epitaxy (MBE). The growth behavior and thermal stability of the films were investigated with scanning tunneling microscopy (STM), X-ray phototelectron spectroscopy (XPS), Auger electron spectroscopy (AES), and transmission electron microscopy (TEM). Cr grew as 3D clusters on all substrates. For all three Cr/oxide systems a strong temperature dependent interfacial reaction was observed. The results suggested that these reactions depended greatly on thermodynamics and on transport properties in the oxide substrates.

引用

页码：117 / 126

页数：10

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