Dielectric function of wurtizite GaN and AlN thin films

被引：73

作者：

Benedict, LX ^{[1
]}

Wethkamp, T

Wilmers, K

Cobet, C

Esser, N

Shirley, EL

Richter, W

Cardona, M

机构：

[1] Lawrence Livermore Natl Lab, H Div, Phys Directorate, Livermore, CA 94550 USA

[2] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

[3] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany

[4] NIST, Opt Technol Div, Phys Lab, Gaithersburg, MD 20899 USA

来源：

SOLID STATE COMMUNICATIONS | 1999年 / 112卷 / 03期

关键词：

semiconductors; electronic band structure; optical properties; synchrotron radiation;

D O I：

10.1016/S0038-1098(99)00323-3

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Measurements and calculations of the dielectric function of wurtzite GaN and AIN are presented. Spectroscopic ellipsometry was used to determine epsilon(omega) Of thin film samples in the energy range from 3 to 9.8 eV. Calculations of epsilon(omega) for the bulk materials were performed within a first-principles electronic structure scheme that includes the electron-hole interaction. The agreement between experiment and theory is dramatically improved over the previous work, a result of improvements in both experimental technique and theoretical description. The predicted polarization dependence of the dielectric function of these materials exhibits features similar to that in other wurtzite structure materials. (C) 1999 Published by Elsevier Science Ltd. All rights reserved.

引用

页码：129 / 133

页数：5

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