4H-SiC N-Channel JFET for Operation in High-Temperature Environments

被引：25

作者：

Lien, Wei-Cheng ^{[1
,2
]}

Damrongplasit, Nattapol ^{[1
]}

Paredes, John H. ^{[3
]}

Senesky, Debbie G. ^{[4
]}

Liu, Tsu-Jae K. ^{[1
]}

Pisano, Albert P. ^{[1
,5
,6
]}

机构：

[1] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA

[2] Univ Calif Berkeley, Appl Sci & Technol Program, Berkeley, CA 94720 USA

[3] Univ Calif Merced, Dept Mat Sci & Engn, Merced, CA 95343 USA

[4] Stanford Univ, Dept Aeronaut & Astronaut, Stanford, CA 94305 USA

[5] Univ Calif San Diego, Dept Mech & Aerosp Engn, San Diego, CA 92093 USA

[6] Univ Calif San Diego, Dept Elect & Comp Engn, San Diego, CA 92093 USA

来源：

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | 2014年 / 2卷 / 06期

关键词：

High-temperature electronics; junction field effect transistor (JFET); silicon carbide (SiC); PHOTODETECTORS;

D O I：

10.1109/JEDS.2014.2355132

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Lateral depletion-mode 4H-SiC n-channel junction field-effect transistors (JFETs) are demonstrated to operate with well-behaved electrical characteristics at temperatures up to 600 degrees C in air. Ti/Ni/TiW metal stacks are used to form ohmic contacts to n-type 4H-SiC with specific contact resistance of 1.14 x 10(-3) Omega cm(2)at 600 degrees C. The on/off drain saturation current ratio and intrinsic gain at 600 degrees C are 1.53 x 10(3) and 57.2, respectively. These results indicate that 4H-SiC JFETs can be used for extremely-high-temperature electronics applications.

引用

页码：164 / 167

页数：4

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