Correlating optical damage threshold with intrinsic defect populations in fused silica as a function of heat treatment temperature

被引：19
作者：
Shen, N. [1 ]
Matthews, M. J. [1 ]
Elhadj, S. [1 ]
Miller, P. E. [1 ]
Nelson, A. J. [1 ]
Hamilton, J. [1 ]
机构：
[1] Lawrence Livermore Natl Lab, Livermore, CA 94550 USA
来源：
JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2013年 / 46卷 / 16期
关键词：
SURFACE DAMAGE; LASER; DIOXIDE; SPECTROSCOPY; ABSORPTION; MICROSCOPY; RESISTANCE; IGNITION; FILMS; SIO2;
D O I：
10.1088/0022-3727/46/16/165305
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Chemical vapour deposition (CVD) is used for the production of fused silica optics in high-power laser applications. However, relatively little is known about the ultraviolet laser damage threshold of CVD films and how they relate to intrinsic defects produced during deposition. We present here a study relating structural and electronic defects in CVD films to 355 nm pulsed-laser damage threshold as a function of post-deposition annealing temperature (T-HT). Plasma-enhanced CVD based on SiH4/N2O under oxygen-rich conditions was used to deposit 1.5, 3.1 and 6.4 mu m thick films on etched SiO2 substrates. Rapid annealing was performed using a scanned CO2 laser beam up to T-HT similar to 2100 K. The films were then characterized using x-ray photoemission spectroscopy, Fourier transform infrared spectroscopy (FTIR) and photoluminescence spectroscopy. A gradual transition in the damage threshold of annealed films was observed for T-HT values up to 1600 K, correlating with a decrease in non-bridging silanol and oxygen deficient centres. An additional sharp transition in damage threshold also occurs at similar to 1850K indicating substrate annealing. Based on our results, a mechanism for damage-related defect annealing is proposed, and the potential of using high-T-HT CVD SiO2 to mitigate optical damage is also discussed.
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页数：11
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