Exciton and core-level electron confinement effects in transparent ZnO thin films

被引:118
作者
Mosquera, Adolfo A. [1 ]
Horwat, David [2 ]
Rashkovskiy, Alexandr [4 ]
Kovalev, Anatoly [4 ]
Miska, Patrice [3 ]
Wainstein, Dmitry [4 ]
Albella, Jose M. [1 ]
Endrino, Jose L. [5 ]
机构
[1] CSIC, Inst Ciencia Mat, E-28049 Madrid, Spain
[2] Univ Lorraine, Inst Jean Lamour, UMR 7198, F-54000 Nancy, France
[3] CNRS, Inst Jean Lamour, UMR 7198, F-54000 Nancy, France
[4] Surface Phenomena Res Grp, Moscow 105005, Russia
[5] Abengoa Res SL, Seville 41014, Spain
关键词
PHOTOLUMINESCENCE; ZINC; SPECTROSCOPY; MECHANISMS; OXIDATION; EMISSION; GREEN; SHIFT; GAIN;
D O I
10.1038/srep01714
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
The excitonic light emission of ZnO films have been investigated by means of photoluminescence measurements in ultraviolet-visible region. Exciton confinement effects have been observed in thin ZnO coatings with thickness below 20 nm. This is enhanced by a rise of the intensity and a blue shift of the photoluminescence peak after extraction of the adsorbed species upon annealing in air. It is found experimentally that the free exciton energy (determined by the photoluminescence peak) is inversely proportional to the square of the thickness while core-level binding energy is inversely proportional to the thickness. These findings correlate very well with the theory of kinetic and potential confinements.
引用
收藏
页数:6
相关论文
共 53 条
[1]   Polarity effects in the x-ray photoemission of ZnO and other wurtzite semiconductors [J].
Allen, M. W. ;
Zemlyanov, D. Y. ;
Waterhouse, G. I. N. ;
Metson, J. B. ;
Veal, T. D. ;
McConville, C. F. ;
Durbin, S. M. .
APPLIED PHYSICS LETTERS, 2011, 98 (10)
[2]   Structural, electrical, and optical properties of atomic layer deposition Al-doped ZnO films [J].
Banerjee, Parag ;
Lee, Won-Jae ;
Bae, Ki-Ryeol ;
Lee, Sang Bok ;
Rubloff, Gary W. .
JOURNAL OF APPLIED PHYSICS, 2010, 108 (04)
[3]  
BORDASS WT, 1969, NATURE, V222, P661
[5]   ANOMALOUS OPTICAL ABSORPTION LIMIT IN INSB [J].
BURSTEIN, E .
PHYSICAL REVIEW, 1954, 93 (03) :632-633
[6]   SURFACE EFFECTS ON LOW-ENERGY CATHODOLUMINESCENCE OF ZINC-OXIDE [J].
BYLANDER, EG .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (03) :1188-1195
[7]   Strong exciton emission from ZnO microcrystal formed by continuous 532nm laser irradiation [J].
Cao, Weitao ;
Du, Weimin .
JOURNAL OF LUMINESCENCE, 2007, 124 (02) :260-264
[8]   X-ray photoelectron spectroscopy and auger electron spectroscopy studies of Al-doped ZnO films [J].
Chen, M ;
Wang, X ;
Yu, YH ;
Pei, ZL ;
Bai, XD ;
Sun, C ;
Huang, RF ;
Wen, LS .
APPLIED SURFACE SCIENCE, 2000, 158 (1-2) :134-140
[9]   Electric field-induced structural changes in pentacene-based organic thin-film transistors studied by in situ micro-Raman spectroscopy [J].
Cheng, HL ;
Chou, WY ;
Kuo, CW ;
Tang, FC ;
Wang, YW .
APPLIED PHYSICS LETTERS, 2006, 88 (16)
[10]   Photoluminescence and ultraviolet lasing of polycrystalline ZnO thin films prepared by the oxidation of the metallic Zn [J].
Cho, SL ;
Ma, J ;
Kim, YK ;
Sun, Y ;
Wong, GKL ;
Ketterson, JB .
APPLIED PHYSICS LETTERS, 1999, 75 (18) :2761-2763