Localization of electrical insulation and partial-discharge failures of IGBT modules

被引：77

作者：

Mitic, G ^{[1
]}

Lefranc, G ^{[1
]}

机构：

[1] Siemens AG, Corp Technol Dept, D-81730 Munich, Germany

来源：

IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS | 2002年 / 38卷 / 01期

关键词：

electrical insulation; insulated gate bipolar transistor module; phase-resolved partial discharge;

D O I：

10.1109/28.980373

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The partial discharge (PD) and insulation resistance is very important in view of the increasing operating voltages of insulated gate bipolar transistor modules. PD spectroscopy showed that the PDs from metallization edges and interfaces in silicone gel were the main sources of PD at high voltages. It also allows these types of PDs to be clearly distinguished. As the PDs from interfaces in silicone gel increase strongly at high voltages, it is especially important for the silicone gel to adhere well to the ceramic.

引用

页码：175 / 180

页数：6

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