A HIGH FIGURE-OF-MERIT LOW PHASE NOISE 15-GHz CMOS VCO

被引：3

作者：

Lin, Yao-Chian ^{[1
]}

Yeh, Mei-Ling ^{[1
]}

Chang, Chung-Cheng ^{[1
]}

机构：

[1] Natl Taiwan Ocean Univ, Dept Elect Engn, Keelung, Taiwan

来源：

JOURNAL OF MARINE SCIENCE AND TECHNOLOGY-TAIWAN | 2013年 / 21卷 / 01期

关键词：

figure-of-merit; phase noise; VCO; tuning range; VOLTAGE;

D O I：

10.6119/JMST-011-1230-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A monolithic inductor-capacitor tank (LC-tank), voltage-controlled oscillator (VCO) with high figure-of-merit (FOM), low phase noise, and low power consumption is presented for Ku-Band applications. The p-type metal-oxide-semiconductor (PMOS) differential cross-coupled topology is adopted in this design to reduce the phase noise. The measured phase noise at 1 MHz offset is -116.6 dBc/Hz at the frequency of 15.57 GHz. The excellent FOM is -192.66 dBc/Hz and the power dissipation is 6 mW. The tuning range is approximately 290 MHz with control voltage of 0 to 1.8 V. The chip size is 0.51 x 0.74 mm(2). The VCO was implemented in the Taiwan Semiconductor Manufacturing Company (TSMC) 0.18 mu m complementary metal-oxide-semiconductor (CMOS) process.

引用

页码：82 / 86

页数：5

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