Fabrication of 2700-v 12-mΩ•cm2 non ion-implanted 4H-SiC BJTs with common-emitter current gain of 50

被引：36

作者：

Ghandi, Reza ^{[1
]}

Lee, Hyung-Seok ^{[1
]}

Domeij, Martin ^{[1
]}

Buono, Benedetto ^{[1
]}

Zetterling, Carl-Mikael ^{[1
]}

Ostling, Mikael ^{[1
]}

机构：

[1] Royal Inst Technol, Sch Informat & Commun Technol, S-16440 Stockholm, Sweden

来源：

IEEE ELECTRON DEVICE LETTERS | 2008年 / 29卷 / 10期

关键词：

bipolar junction transistors (BJTs); power transistors; silicon carbide;

D O I：

10.1109/LED.2008.2004419

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-voltage blocking (2.7-kV) implantation-free SiC bipolar junction transistors with low ON-state resistance (12 m Omega . cm(2)) and high common-emitter current gain of 50 have been fabricated. A graded-base doping was implemented to provide a low-resistive ohmic contact to the epitaxial base. This design features a fully depleted base layer close to the breakdown voltage providing an efficient epitaxial JTE without ion implantation. Eliminating all ion implantation steps in this approach is beneficial for avoiding high-temperature dopant activation annealing and for avoiding generation of lifetime-killing defects that reduce the current gain.

引用

页码：1135 / 1137

页数：3

共 14 条

[1] 4 kV 4H-SiC epitaxial emitter bipolar junction transistors [J].

Balachandran, S ;

Chow, TP ;

Agarwal, A ;

Scozzie, C ;

Jones, KA .

IEEE ELECTRON DEVICE LETTERS, 2005, 26 (07) :470-472

[2]

BALACHANDRAN S, 2007, 19 INT S POW SEM DEV

[3] A 4H-SiC BJT with an epitaxially regrown extrinsic base layer [J].

Danielsson, E ;

Domeij, M ;

Lee, HS ;

Zetterling, CM ;

Östling, M ;

Schöner, A ;

Hallin, C .

SILICON CARBIDE AND RELATED MATERIALS 2004, 2005, 483 :905-908

[4] Geometrical effects in high current gain 1100-V 4H-SiC BJTs [J].

Domeij, M ;

Lee, HS ;

Danielsson, E ;

Zetterling, CM ;

Östling, M ;

Schöner, A .

IEEE ELECTRON DEVICE LETTERS, 2005, 26 (10) :743-745

[5] EMITTER SIZE EFFECT ON CURRENT GAIN IN FULLY SELF-ALIGNED ALGAAS/GAAS HBTS WITH ALGAAS SURFACE PASSIVATION LAYER [J].

HAYAMA, N ;

HONJO, K .

IEEE ELECTRON DEVICE LETTERS, 1990, 11 (09) :388-390

[6]

ITOH A, 1996, IEEE ELECTR DEVICE L, V17, P137

[7]

JONAS C, 2007, 49 EL MAT C EMC NOTR

[8] Metal electrode/high-k dielectric gate-stack technology for power management [J].

Lee, Byoung Hun ;

Song, Seung Chul ;

Choi, Rino ;

Kirsch, Paul .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (01) :8-20

[9] 1200-V 5.2-mΩ • cm2 4H-SiC BJTs with a high common-emitter current gain [J].

Lee, Hyung-Seok ;

Domeij, Martin ;

Zetterling, Carl-Mikael ;

Ostling, Mikael ;

Allerstam, Fredrik ;

Sveinbjornsson, Einar O. .

IEEE ELECTRON DEVICE LETTERS, 2007, 28 (11) :1007-1009

[10] High-voltage 4H-SiC pn diodes fabricated by p-type ion implantation [J].

Negoro, Y ;

Kimoto, T ;

Matsunami, H .

ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS, 2003, 86 (12) :44-51

← 1 2 →