Dislocation scattering in AlxGa1-xN/GaN heterostructures

被引：29

作者：

Xu, Xiaoqing ^{[1
]}

Liu, Xianglin ^{[1
]}

Han, Xiuxun ^{[1
]}

Yuan, Hairong ^{[1
]}

Wang, Jun ^{[1
]}

Guo, Yan ^{[1
]}

Song, Huaping ^{[1
]}

Zheng, Gaolin ^{[1
]}

Wei, Hongyuan ^{[1
]}

Yang, Shaoyan ^{[1
]}

Zhu, Qinsheng ^{[1
]}

Wang, Zhanguo ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 18期

基金：

美国国家科学基金会;

关键词：

aluminium compounds; dislocation density; electron mobility; gallium compounds; III-V semiconductors; interface roughness; semiconductor heterojunctions; two-dimensional electron gas; wide band gap semiconductors;

D O I：

10.1063/1.3013836

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The theoretical electron mobility limited by dislocation scattering of a two-dimensional electron gas confined near the interface of AlxGa1-xN/GaN heterostructures was calculated. Based on the model of treating dislocation as a charged line, an exponentially varied potential was adopted to calculate the mobility. The estimated mobility suggests that such a choice can simplify the calculation without introducing significant deviation from experimental data, and we obtained a good fitting between the calculated and experimental results. It was found that the measured mobility is dominated by interface roughness and dislocation scattering at low temperatures if dislocation density is relatively high (>10(9) cm(-2)), and accounts for the nearly flattening-out behavior with increasing temperature.

引用

页数：3

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