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Room-temperature ferromagnetism in highly-resistive Ni-doped TiO2
被引:45
|作者:
Cho, JH
[1
]
Hwang, TJ
Joh, YG
Kim, EC
Kim, DH
Lee, KJ
Park, HW
Ri, HC
Kim, JP
Cho, CR
机构:
[1] Yeungnam Univ, Dept Phys, Kyongsan 712749, South Korea
[2] Chungnam Natl Univ, Dept Phys, Taejon 305764, South Korea
[3] Kyungpook Natl Univ, Dept Phys, Taegu 702701, South Korea
[4] Korea Basic Sci Inst, Nano Surface Technol Res Lab, Pusan 609753, South Korea
基金:
新加坡国家研究基金会;
关键词:
D O I:
10.1063/1.2179607
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
We investigated the magnetic and transport properties of Ni-doped TiO2 films grown by a sol-gel method with Ni concentrations from 1% to 8%. All the samples exhibited ferromagnetism at room temperature identified by optical magnetic circular dichroism along with magnetometer measurement. The microstructural and compositional analysis revealed Ni-rich regions with rather uniform background, indicating that at least two different sources contribute to the observed ferromagnetism. The Hall effect study showed that the carriers are electrons with density lower than 10(18) cm(-3) at room temperature, and no anomalous Hall effect has been observed due to the high resistivity of our samples. The observation of ferromagnetism in highly-resistive Ni-doped TiO2 films questions the carrier-mediated exchange interaction as an origin of ferromagnetism in this material.
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