The electrical characteristics of the Fe3O4/Si junctions

被引：28

作者：

Caldiran, Zakir ^{[1
]}

Deniz, Ali Riza ^{[1
]}

Sahin, Yilmaz ^{[1
]}

Metin, Onder ^{[2
]}

Meral, Kadem ^{[2
]}

Aydogan, Sakir ^{[1
]}

机构：

[1] Ataturk Univ, Fac Sci, Dept Phys, TR-25240 Erzurum, Turkey

[2] Ataturk Univ, Fac Sci, Dept Chem, TR-25240 Erzurum, Turkey

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2013年 / 552卷

关键词：

Fe3O4; Junction; Irradiation; Current-voltage; CAPACITANCE-VOLTAGE CHARACTERISTICS; SCHOTTKY-BARRIER DIODES; MAGNETIC-PROPERTIES; CONTACTS; IRRADIATION; TRANSPORT; SI; NANOPARTICLES; TEMPERATURE; MORPHOLOGY;

D O I：

10.1016/j.jallcom.2012.11.079

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The Fe3O4/Si junctions have been fabricated. The Fe3O4 NPs have been characterized by using TEM and XRD. Detailed study of the current-voltage (I-V) plots and capacitance-voltage measurements of the device (at f = 500 kHz) has been executed. The characteristic parameters of the structure such as ideality factor, barrier height, and series resistance have been calculated from the I-V measurements. The rectification ratio was determined to be similar to 3 x 10(4). The I-V characteristics clearly reveal the mechanism as ohmic at low voltage and that of trap-filled space charge limited current (SCLC) at higher voltage. The effect of X-ray irradiation on the junction characteristics has been studied using in situ current-voltage measurements. Diode parameters are found to vary as a function of the irradiation dose. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：437 / 442

页数：6

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