Electronic properties of light-emitting p-n hetero-junction array consisting of p+-Si and aligned n-ZnO nanowires

被引：11

作者：

Bae, Min Young ^{[1
]}

Min, Kyung Whon ^{[1
]}

Yoon, Jangyeol ^{[1
]}

Kim, Gyu-Tae ^{[2
]}

Ha, Jeong Sook ^{[1
,3
]}

机构：

[1] Korea Univ, Dept Chem & Biol Engn, Seoul 136701, South Korea

[2] Korea Univ, Sch Elect Engn, Seoul 136701, South Korea

[3] Korea Univ, KU KIST Sch Converging Sci & Technol, Seoul 136701, South Korea

来源：

JOURNAL OF APPLIED PHYSICS | 2013年 / 113卷 / 08期

基金：

新加坡国家研究基金会;

关键词：

NANOGENERATORS; DRIVEN; GROWTH;

D O I：

10.1063/1.4792302

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Hetero-junction array of p(+)-Si/n-ZnO nanowires (NWs) was fabricated via contacting of aligned ZnO NWs onto a patterned p(+)-Si substrate. Current-voltage (I-V) measurement on the p-n junction showed a rectification behavior with a high rectification ratio of 10(4) at +/- 3V. In addition, the enhancement of forward current as well as the decrease of the turn-on voltage was observed with the application of negative gate bias and noticeable p-type gate dependence, which was explained in terms of asymmetric shift of the Fermi levels with gate bias in the suggested energy band diagram. Such formed hetero-junction devices showed strong UV sensitivity of 2 x 10(4) under reverse bias of -3 V and electroluminescence in both UV and visible ranges, suggesting its potential applicability in optoelectronic devices. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4792302]

引用

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