Strained SiNMOSFETs for high performance CMOS technology

被引：198

作者：

Rim, K ^{[1
]}

Koester, S ^{[1
]}

Hargrove, M ^{[1
]}

Chu, J ^{[1
]}

Mooney, PM ^{[1
]}

Ott, J ^{[1
]}

Kanarsky, T ^{[1
]}

Ronsheim, P ^{[1
]}

Ieong, M ^{[1
]}

Grill, A ^{[1
]}

Wong, HSP ^{[1
]}

机构：

[1] IBM Corp, TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

2001 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS | 2001年

关键词：

D O I：

10.1109/VLSIT.2001.934946

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Performance enhancements in strained Si NMOSFETs were demonstrated at L-eff < 70 nm. A 70% increase in electron mobility was observed at vertical fields as high as 1.5 MV/cm for the first time, suggesting a new mobility enhancement mechanism in addition to reduced phonon scattering. Current drive increase by greater than or equal to35% was observed at L-eff < 70 nm. These results indicate that strain can be used to improve CMOS device performance at sub-100 nm technology nodes.

引用

页码：59 / 60

页数：2

共 6 条

[1] Band structure, deformation potentals, and carrier mobility in strained Si, Ge, and SiGe alloys [J].