Fully differential Ultra-wideband LNA-Mixer for K to Ka Band receiver in 45nm CMOS SOI technology

被引:0
|
作者
Wang, Yu [1 ]
Cui, Jie [1 ]
Zhang, Renli [1 ]
Sheng, Weixing [1 ]
机构
[1] Nanjing Univ Sci & Technol, Sch Elect & Opt Engn, Nanjing, Peoples R China
关键词
LNA-mixer; resistive feedback network; capacitance cross coupling network; single ended to balanced; inductive resonance technique;
D O I
10.1109/apmc46564.2019.9038526
中图分类号
TN [电子技术、通信技术];
学科分类号
0809 ;
摘要
This paper presents a fully differential ultra-wideband LNA-Mixer for K to Ka Band receiver in 45nm CMOS SOI technology. In the LNA stage, a resistive feedback network and a capacitance cross coupling network are adopted to achieve low noise figure and wideband input matching over the desired bandwidth. In addition, by adding another transistor in the first stage circuit to invert the signal, the LNA realizes a function of single ended to balanced. The mixer stage utilizes an inductive resonance technique to compensate noise degradation and conversion gain degradation at high frequency due to parasitic capacitance. This LNA-mixer exhibits a high and flat conversion gain of 26.2 +/- 0.5 dB and a noise figure from 4.2 to 7dB over the desired frequency ranging from 18 to 40GHz. The input and output reflection loss are all less than 13 dB.
引用
收藏
页码:16 / 18
页数:3
相关论文
共 35 条
  • [1] A K To Ka Band Single-ended To Balanced Ultra-wideband LNA In 45nm CMOS SOI
    Wang, Yu
    Cui, Jie
    Zhang, Renli
    2019 IEEE INTERNATIONAL SYMPOSIUM ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY (RFIT2019), 2019,
  • [2] A Fully-integrated Ka-band Stacked Power Amplifier in 45nm CMOS SOI Technology
    Chen, Jing-Hwa
    Helmi, Sultan R.
    Mohammadi, Saeed
    2013 IEEE 13TH TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS (SIRF), 2013, : 75 - 77
  • [3] A Robust to PVT Fully-Differential Amplifier in 45nm SOI-CMOS Technology
    Amaya, Andres
    Villota, Francisco
    Espinosa, Guillermo
    2013 IEEE 4TH LATIN AMERICAN SYMPOSIUM ON CIRCUITS AND SYSTEMS (LASCAS), 2013,
  • [4] Low-Power K-Band LNA in 45 nm SOI CMOS
    Issakov, Vadim
    Ciocoveanu, Radu
    2019 IEEE INTERNATIONAL CONFERENCE ON MICROWAVES, ANTENNAS, COMMUNICATIONS AND ELECTRONIC SYSTEMS (COMCAS), 2019,
  • [5] An X to Ka-Band Fully-integrated Stacked Power Amplifier in 45 nm CMOS SOI Technology
    Helmi, Sultan R.
    Chen, Jing-Hwa
    Mohammadi, Saeed
    2014 IEEE 14TH TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS (SIRF), 2014, : 74 - 76
  • [6] A Wideband Power Amplifier in 45 nm CMOS SOI Technology for X Band Applications
    Chen, Jing-Hwa
    Helmi, Sultan R.
    Jou, Alice Yi-Szu
    Mohammadi, Saeed
    IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2013, 23 (11) : 587 - 589
  • [7] K-BAND single balanced mixer for ultra-wideband radar in 0.18-μm cmos technology
    Yu, Han-Yeol
    Choi, Sung-Sun
    Kim, Sung-Hyun
    Kim, Yong-Hoon
    MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2007, 49 (11) : 2697 - 2700
  • [8] A Multi-band OFDM Ultra-wideband SoC in 90 nm CMOS Technology
    Kim, Do-Hoon
    Kang, Kyu-Min
    Lee, Chungyong
    IEEE TRANSACTIONS ON CONSUMER ELECTRONICS, 2011, 57 (03) : 1064 - 1070
  • [9] A Wideband Ka-band Receiver Front-End in 90-nm CMOS Technology
    Li, Zhiqun
    Cao, Jia
    Li, Qin
    Wang, Zhigong
    2013 8TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC), 2013, : 5 - 8
  • [10] A Wideband Delta-Sigma Based Closed-Loop Fully Digital Phase Modulator in 45nm CMOS SOI
    Gheidi, Hamed
    Nakatani, Toshifumi
    Leung, Vincent
    Asbeck, Peter M.
    2016 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM (RFIC), 2016, : 158 - 161