Experimental evidence of correlation between 1/f noise level and metal-to-insulator transition temperature in epitaxial La0.7Sr0.3MnO3 thin films

被引：20

作者：

Mechin, L. ^{[1
]}

Wu, S. ^{[1
]}

Guillet, B. ^{[1
]}

Perna, P. ^{[1
,2
]}

Fur, C. ^{[1
]}

Lebargy, S. ^{[1
]}

Adamo, C. ^{[3
]}

Schlom, D. G. ^{[3
,4
]}

Routoure, J. M. ^{[1
]}

机构：

[1] GREYC UMR 6072 CNRS ENSICAEN Univ Caen Basse Norm, F-14050 Caen, France

[2] IMDEA Nanociencia, Madrid 28049, Spain

[3] Cornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA

[4] Kavli Inst Cornell Nanoscale Sci, Ithaca, NY 14853 USA

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2013年 / 46卷 / 20期

关键词：

MAGNETIC-ANISOTROPY; BOLOMETRIC APPLICATIONS; STRAIN RELAXATION; MAGNETORESISTANCE; LA1-XSRXMNO3; DEPENDENCE; THICKNESS; LA2/3SR1/3MNO3; DEPOSITION; CRYSTAL;

D O I：

10.1088/0022-3727/46/20/202001

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The relation between lattice deformation, dc electrical properties and 1/f noise at room temperature was investigated experimentally in two series of high epitaxial La0.7Sr0.3MnO3 (LSMO) thin films of various thicknesses. The first series was deposited on SrTiO3 (0 0 1) single crystal substrates by pulsed laser deposition and the second one on SrTiO3-buffered Si (0 0 1) substrates by reactive-molecular-beam epitaxy. A clear correlation was found between 1/f noise level and the temperature of the metal-to-insulator transition. These findings are important in view of the optimization of LSMO thin films for applications in sensors.

引用

页数：6

共 41 条

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