Epitaxial growth and characterization of Si-based light-emitting Si/β-FeSi2 film/Si double heterostructures on Si(001) substrates by molecular beam epitaxy

被引：34

作者：

Sunohara, T. ^{[1
]}

Kobayashi, K. ^{[1
]}

Suemasu, T. ^{[1
]}

机构：

[1] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

来源：

THIN SOLID FILMS | 2006年 / 508卷 / 1-2期

关键词：

beta-FeSi2; LED; electroluminescence; reactive deposition epitaxy;

D O I：

10.1016/j.tsf.2005.07.343

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Si/beta-FeSi2/Si (SFS) heterostructures were grown epitaxially on Si(001) by reactive deposition epitaxy (RDE) for beta-FeSi2 and by molecular beam epitaxy (MBE) for Si. Distinct 1.54-mu m photoluminescence was observed at 77 K for SFS with a beta-FeSi2 thickness ranging from 5 to 10 mm. When the thickness of the beta-FeSi2 layer was increased up to 40 nm, the PL intensity of beta-FeSi2 decreased and the full-width at half maximum (FWHM) of the PL peak increased. Reflection high-energy electron diffraction observation revealed that the Si overlayer has a tendency to form polycrystalline structures with the increase of beta-FeSi2 thickness. The degradation of PL was also observed for samples annealed at 900 degrees C. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：371 / 375

页数：5

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