Evaluation of the Timepix chip radiation hardness using a 60Co source

被引：0

作者：

Carna, Maria ^{[1
]}

Ducevova, Katerina ^{[1
]}

Hejtmanek, Martin ^{[1
]}

Koncek, Ondrej ^{[1
]}

Marcisovsky, Michal ^{[1
]}

机构：

[1] Czech Tech Univ, Fac Nucl Sci & Phys Engn, CR-11519 Prague, Czech Republic

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2013年 / 732卷

关键词：

Radiation hardness; Medipix; Pixel detector;

D O I：

10.1016/j.nima.2013.06.088

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Radiation damage is a widely studied topic for its effects on detectors and supporting electronics in various practical applications. Radiation hardness and stability of the detector properties are critical parameters in applications of semiconductor radiation detectors. The 0.25 mu m CMOS technology used in fabrication of the Medipix2 and Timepix chips provides high degree of inherent radiation hardness. We present the study of operational, detection and signal processing properties of the irradiated Timepix chip exposed to a high-flux Co-60 source reaching the operational limits of the chip. (C) 2013 Published by Elsevier EN.

引用

页码：501 / 505

页数：5

共 4 条

[1]

Hartmann F, 2009, SPRINGER TRAC MOD PH, V231, P1

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NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2008, 585 (1-2) :106-108

[3]

Llopart X., TIMEPIX MANUAL V1 0

[4] Radiation Effects in MOS Oxides [J].

Schwank, James R. ;

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Dodd, Paul E. ;

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Ferlet-Cavrois, Veronique .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2008, 55 (04) :1833-1853

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