Dependence of carrier lifetime on Cu-contacting temperature and ZnTe:Cu thickness in CdS/CdTe thin film solar cells

被引：92

作者：

Gessert, T. A. ^{[1
]}

Metzger, W. K. ^{[1
]}

Dippo, P. ^{[1
]}

Asher, S. E. ^{[1
]}

Dhere, R. G. ^{[1
]}

Young, M. R. ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

THIN SOLID FILMS | 2009年 / 517卷 / 07期

关键词：

Solar cells; Cadmium telluride; Copper;

D O I：

10.1016/j.tsf.2008.11.008

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Cu diffusion from a ZnTe:Cu contact interface can increase the net acceptor concentration in the CdTe layer of a CdS/CdTe photovoltaic solar cell. This reduces the space-charge width (W-d) of the junction and enhances cur-rent collection and open-circuit voltage. Here we study the effect of Cu concentration in the CdTe layer on carrier lifetime (tau) using time-resolved photoluminescence measurements of ZnTe:Cu/Ti-contacted CdTe devices. Measurements show that if the ZnTe:Cu layer thickness remains constant and contact temperature is varied, tau increases significantly above its as-deposited value when the contacting temperature is in a range that has been shown to yield high-performance devices (-280 degrees to -320 degrees C). However, when the contacting temperature is maintained near an optimum value and the ZnTe:Cu thickness is varied, tau decreases with ZnTe:Cu thickness. Published by Elsevier B.V.

引用

页码：2370 / 2373

页数：4

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