Evidence for existence of hydrogen-related dangling bonds in hydrogenated amorphous silicon

被引：10
|
作者：
Yokomichi, H [1 ]
Morigaki, K [1 ]
机构：
[1] HIROSHIMA INST TECHNOL,DEPT ELECT ENGN,SAEKI KU,HIROSHIMA 73151,JAPAN
来源：
PHILOSOPHICAL MAGAZINE LETTERS | 1996年 / 73卷 / 05期
关键词：
D O I：
10.1080/095008396180777
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have observed an electron-nuclear double resonance signal due to the D-2 nucleus in sputtered deuterated amorphous Si (a-Si:D). The frequency of the signal is consistent with that estimated from the hyperfine interaction constant of a dangling bond with a H-1 nucleus in hydrogenated amorphous Si (a-Si:H). This result provides further evidence for the existence of H-related (D-related) dangling bonds, that is dangling bonds having H(D) at a nearby site, in a-Si:H (a-Si:D) containing a large amount of H (D).
引用
收藏
页码：283 / 287
页数：5
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