Analysis of Dark Current and Detectivity of Quantum Dot Infrared Photodetectors under the effect of microscale and nanoscale transport mechanisms

被引:0
作者
Rani, Sweta [1 ]
Hussain, Saddam [1 ]
Saha, Sumit [1 ]
Kumar, Jitendra [1 ]
机构
[1] Indian Sch Mines, Indian Inst Technol, Dept Elect Engn, Dhanbad 826004, Jharkhand, India
来源
2017 2ND IEEE INTERNATIONAL CONFERENCE ON TELECOMMUNICATIONS AND PHOTONICS (ICTP) | 2017年
关键词
dark current; mobility; drift velocity; detectivity; PERFORMANCE;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An analysis has been done for the dark current and detectivity of quantum dot infrared photodetectors (QDIPs). Dark current being the most influential factor in the performance of QDIPs has been studied with utmost importance. The effect of drift velocity on the dark current model for QDIPs has been taken into consideration. The effect of variation of electric field on dark current at different temperature values has been analyzed. Detectivity, which is an important figure of merit for measuring the performance of the device, has also been analyzed in accordance with the change in electric field. The effect of the change in the area of the photodetector on the dark current has also been analyzed. This analysis has been done by considering the drift velocity of electrons along with two electron transport mechanisms - the microscale and nanoscale transport and the mobility.
引用
收藏
页码:157 / 160
页数:4
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