A 10-kV Monolithic Darlington Transistor With βforced of 336 in 4H-SiC

被引：8

作者：

Zhang, Qingchun ^{[1
]}

Jonas, Charlotte ^{[1
]}

O'Loughlin, Michael ^{[1
]}

Callanan, Robert ^{[1
]}

Agarwal, Anant ^{[1
]}

Scozzie, Charles ^{[2
]}

机构：

[1] Cree Inc, Res Triangle Pk, NC 27709 USA

[2] USA, Res Lab, Adelphi, MD 20783 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2009年 / 30卷 / 02期

关键词：

Bipolar junction transistors (BJTs); BVCBO; BVCEO; current gain; Darlington transistor; silicon carbide; BIPOLAR-JUNCTION-TRANSISTORS; CURRENT GAIN;

D O I：

10.1109/LED.2008.2009953

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

4H-SiC bipolar Darlington transistors with a record-high current gain have been demonstrated. The de forced current gain was measured up to 336 at 200 W/cm(2) (J(C) = 35 A/cm(2) at V-CE = 5.7 V) at room temperature. The current gain exhibits a negative temperature coefficient and remains as high as 135 at 200 degrees C. The specific on-resistance is 140 M Omega . cm(2) at room temperature and increases at elevated temperatures. An open-emitter breakdown voltage (BVCBO) of 10 kV was achieved at a leakage current density of < 1 mA/cm(2). The device exhibits an open-base breakdown voltage (BVCEO) of 9.5 kV. The high current gain of SiC Darlington transistors can significantly reduce the gate-drive power consumption with the same forward-voltage drop as that of 10-kV SiC bipolar junction transistors, thus making the device attractive for high-power high-temperature applications.

引用

页码：142 / 144

页数：3

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