Mie resonances, infrared emission, and the band gap of InN

被引：201

作者：

Shubina, TV

Ivanov, SV

Jmerik, VN

Solnyshkov, DD

Vekshin, VA

Kop'ev, PS

Vasson, A

Leymarie, J

Kavokin, A

Amano, H

Shimono, K

Kasic, A

Monemar, B

机构：

[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[2] CNRS, LASMEA, UMR 6602, F-63177 Aubiere, France

[3] Meijo Univ, Nagoya, Aichi 4688502, Japan

[4] Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden

来源：

PHYSICAL REVIEW LETTERS | 2004年 / 92卷 / 11期

基金：

俄罗斯基础研究基金会;

关键词：

D O I：

10.1103/PhysRevLett.92.117407

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Mie resonances due to scattering or absorption of light in InN-containing clusters of metallic In may have been erroneously interpreted as the infrared band gap absorption in tens of papers. Here we show by direct thermally detected optical absorption measurements that the true band gap of InN is markedly wider than the currently accepted 0.7 eV. Microcathodoluminescence studies complemented by the imaging of metallic In have shown that bright infrared emission at 0.7-0.8 eV arises in a close vicinity of In inclusions and is likely associated with surface states at the metal/InN interfaces.

引用

页码：117407 / 1

页数：4

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