Switching in Nanoscale Hafnium Oxide-Based Ferroelectric Transistors

被引：1

作者：

Mulaosmanovic, Halid ^{[1
]}

Schroeder, Uwe ^{[1
]}

Mikolajick, Thomas ^{[1
,2
]}

Slesazeck, Stefan ^{[1
]}

机构：

[1] Nanoelect Mat Lab NaMLab gGmbH, Noethnitzer Str 64a, D-01187 Dresden, Germany

[2] Tech Univ Dresden, IHM, Noethnitzer Str 64, D-01187 Dresden, Germany

来源：

FERROELECTRIC-GATE FIELD EFFECT TRANSISTOR MEMORIES: DEVICE PHYSICS AND APPLICATIONS, 2ND EDITION | 2020年 / 131卷

关键词：

DOMAIN-STRUCTURE;

D O I：

10.1007/978-981-15-1212-4_5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The recent advent of ferroelectricity in thin hafnium oxide films has enabled an unprecedented scaling of ferroelectric field-effect transistors (FeFETs) based on this material. However, the small-area devices, which have the channel length of only a few tens of nanometers, show some striking performance differences when compared to the large-area ones. In this chapter, the switching of these nanoscale FeFETs will be investigated. In particular, novel switching phenomena will be pointed out, including the abrupt and stepwise switching transitions, the appearance of switching stochasticity and the evidence for the accumulative switching upon identical voltage excitations. These properties not only provide new and useful insights for memory applications but also set the basis for exploiting FeFETs for novel applications, such as neuromorphic and stochastic computing.

引用

页码：97 / 108

页数：12