A Fully-Integrated Low Power K-band Radar Transceiver in 130nm CMOS Technology

被引：7
|
作者：
Kim, Seong-Kyun [1 ]
Cui, Chenglin [1 ]
Kim, Byung-Sung [1 ]
Kim, SoYoung [1 ]
机构：
[1] Sungkyunkwan Univ, Coll Informat & Commun Engn, Suwon, South Korea
来源：
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE | 2012年 / 12卷 / 04期
关键词：
CMOS integrated circuit; k-band; millimeter-wave; radar; transceiver; low-noise amplifier; power amplifier; NOISE;
D O I：
10.5573/JSTS.2012.12.4.426
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A fully-integrated low power K-band radar transceiver in 130 nm CMOS process is presented. It consists of a low-noise amplifier (LNA), a down-conversion mixer, a power amplifier (PA), and a frequency synthesizer with injection locked buffer for driving mixer and PA. The receiver front-end provides a conversion gain of 19 dB. The LNA achieves a power gain of 1 5 dB and noise figure of 5.4 dB, and the PA has an output power of 9 dBm. The phase noise of VCO is -90 dBc/Hz at 1-MHz offset. The total dc power dissipation of the transceiver is 142 mW and the size of the chip is only 1.2 x 1.4 mm(2).
引用
收藏
页码：426 / 432
页数：7
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