Double-Gate TFET With Vertical Channel Sandwiched by Lightly Doped Si

被引：87

作者：

Kim, Jang Hyun ^{[1
]}

Kim, Sangwan ^{[2
]}

Park, Byung-Gook ^{[1
]}

机构：

[1] Seoul Natl Univ, Interuniv Semicond Res Ctr, Dept Elect & Comp Engn, Seoul 08826, South Korea

[2] Ajou Univ, Dept Elect & Comp Engn, Suwon 16499, South Korea

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2019年 / 66卷 / 04期

关键词：

Bulk Si substrate; double-gate structure; low-power device; subthreshold swing (SS); tunnel field-effect transistor (TFET); vertical tunnel; FIELD-EFFECT TRANSISTORS; TUNNEL FET; SUBTHRESHOLD; N-2;

D O I：

10.1109/TED.2019.2899206

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper examines a tunnel field-effect transistor (TFET) as a promising device for achieving steeper switching and better electrical performances in low-power operation. It features a double-gate TFET with vertical channel sandwiched by lightly doped Si (VS-TFET). The vertical tunnel junction is employed on the source side for the steeper subthreshold swing (SS) and for the higher ON-current (I-ON) by restricting tunnel barrier width. The VS-TFET shows 17-mV/decminimum SS and 10(4) ON/OFF current ratio (I-ON/I-OFF) for sub-0.7-V gate overdrive. In addition, the VS-TFET shows sub-60-mV/dec SS in a wide range of ID regardless of sweep directions. In conclusion, the work presented here demonstrates that the VS-TFET will be one of the most promising candidates for a next-generation low-power device.

引用

页码：1656 / 1661

页数：6

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